STMicroelectronics STD616A
The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability.| Part No. | STD616A |
|---|---|
| Datasheet | STD616A Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: SWITCH MODE POWER SUPPLIESDESCRIPTION
IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1000 450 12 1.6 2.4 0.8 1.2 20 -65 to 150 150 Unit V V V A A A A W o o C C June 2003 1/6 STD616A THERMAL DATA R thj-case Thermal Resistance Junction-case Max 6.25 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Collector Cut-off Current (V BE = 0 V) Test Conditions V CE = 1000 V V CE = 1000 V I C = 100 mA T j = 125 o C L = 25 mH 450 Min. Typ. Max. 50 0.5 Unit µA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0...
