STD7NM50N-1 Description
This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STD7NM50N-1 Key Features
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
- Switching application
- STD7NM50N-1
- STF7NM50N
- STP7NM50N
- 3 Electrical characteristics
- 10 Packaging mechanical data
- 15 Revision history
- STD7NM50N-1
- STF7NM50N