STD80N10F7 Description
th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. '3$.72DQG 72)3 QR7$% +3$. $0Y Order codes STD80N10F7 STF80N10F7 STH80N10F7-2 STP80N10F7 Table.
STD80N10F7 Key Features
- Extremely low gate charge
- Ultra low on-resistance
- Low gate input resistance
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