Datasheet Details
| Part number | STD80N10F7 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 695.79 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
 STD80N10F7 Datasheet
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General Description
These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Key Features
- Order codes VDS @ RDS(on) TJmax max STD80N10F7 0.01 Ω STF80N10F7 0.01 Ω 100 V STH80N10F7-2 0.0095 Ω STP80N10F7 0.01 Ω ID 70 A 40 A 80 A PTOT 85 W 30 W 110 W.
- Extremely low gate charge.
- Ultra low on-resistance.
- Low gate input resistance Figure 1. Internal schematic diagram ' 7$% ' 7$% .
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