STMicroelectronics STD8N06
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
| Part No. | STD8N06 |
|---|---|
| Datasheet | STD8N06 Download |
| Manufacturer |  STMicroelectronics |
| Description | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(●) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 60 60 ± 20 8 5.6 32 35 0.23 -65 to 175 175 Unit V V V A A A W W/o C o o C C (●) Pulse width limited by safe operating area December 1996 1/10 STD8N06 THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max...
