STMicroelectronics STD8N60DM2
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STD8N60DM2 |
|---|---|
| Datasheet | STD8N60DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 8A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STD8N60DM2 600 V 600 mΩ 8A● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected PTOT 85 W
APPLICATIONS
● Switching applicationsDESCRIPTION
AM01476v1_tab Product status link STD8N60DM2 Product summary Order code STD8N60DM2 Marking 8N60DM2 Package DPAK Packing Tape and reel DS11054 - Rev 5 - July 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 8 A, di/dt = 900 A/μs, VDS(peak) < V(BR)DSS, VDD = 400 V 3.
