STMicroelectronics STD8N65M5
The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.| Part No. | STD8N65M5 |
|---|---|
| Datasheet | STD8N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDS @ TJ max. RDS(on) max. ID STB8N65M5 STD8N65M5 710 V 0.60 Ω 7A STF8N65M5● Extremely low RDS(on)
● Low gate charge and input capacitance
● Excellent switching performance
● 100% avalanche tested PTOT 70 W 70 W 25 W G(1) S(3)
APPLICATIONS
● Switching applications AM01475v1_noZenDESCRIPTION
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. Product status links STB8N65M5 STD8N65M5 STF8N65M5 DS6548 - Rev 6 - March 2022 For further information contact your local STMicroelectronics sales office. STB8N65M5, STD8N65M5, STF8N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter D²PAK Value DPAK VGS Gate-source voltage ±25 ID Drain current (continuous) at TC = 25 °C 7 ID Drain current (continuous) at TC = 100 °C 4.4 IDM (2) Drain current (pulsed) 28 PTOT Total power dissipation at TC = 25 °C 70 dv/dt (3) Peak diode reco...
