STMicroelectronics STD8NM50N
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STD8NM50N |
|---|---|
| Datasheet | STD8NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Order codes STD8NM50N STP8NM50N STU8NM50N●
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● VDSS@TJMAX RDS(on)max. 550 V < 0.79 Ω ID 1 3 5A TAB DPAK 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 1 TAB 3 2
APPLICATIONS
● TO-220 IPAK Switching applications Figure 1. Internal schematic diagramDESCRIPTION
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. $ 4!" ' 3 !- V Table 1. Device summary Marking Packages DPAK 8NM50N TO-220 Tube IPAK Packaging Tape and reel Order codes STD8NM50N STP8NM50N STU8NM50N September 2012 This is information on a product in full production. Doc ID 17413 Rev 6 1/19 19 Free Datasheet Contents STD8NM50N, STP8NM50N, STU8NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
