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STD8NM50N - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • TAB Order codes STD8NM50N STP8NM50N STU8NM50N.
  • VDSS@TJMAX RDS(on)max. 550 V < 0.79 Ω ID 1 3 5A TAB DPAK 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 1 TAB 3 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD8NM50N, STP8NM50N, STU8NM50N N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes STD8NM50N STP8NM50N STU8NM50N ■ ■ ■ VDSS@TJMAX RDS(on)max. 550 V < 0.79 Ω ID 1 3 5A TAB DPAK 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 1 TAB 3 2 Applications ■ TO-220 IPAK Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.