Datasheet4U Logo Datasheet4U.com

STD8NM60ND - Power MOSFET

General Description

The FDmesh™ II series belongs to the second generation of MDmesh™ technology.

Key Features

  • Type STD8NM60ND STF8NM60ND STP8NM60ND STU8NM60ND VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max < 0.70 Ω < 0.70 Ω < 0.70 Ω < 0.70 Ω ID 3 3 2 1 1 2 7A 7A 7 A(1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed.
  • 3 1 3 1 2 The worldwide best RDS(on).
  • area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. DPAK.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features Type STD8NM60ND STF8NM60ND STP8NM60ND STU8NM60ND VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max < 0.70 Ω < 0.70 Ω < 0.70 Ω < 0.70 Ω ID 3 3 2 1 1 2 7A 7A 7 A(1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ 3 1 3 1 2 The worldwide best RDS(on)* area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. DPAK TO-220FP Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology.