DESCRIPTION
Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. DPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 250 250 ± 20 8 5 32 80 0.64 5 209 –65 to 150 150 Unit V V V A A A W W/°C V/ns mJ °C °C (●)Pulse width limited by safe operating area (1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj ≤TjMAX (2) S...
STMicroelectronics
