APPLICATIONS
: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0, IB = -0.75 A, t p < 10µ s, T j < 150 o C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM Value -500 -400 V (BR)EBO -1.5 -3 -0.75 -1.5 20 -65 to 150 150 Unit V V V A A A A W o C o C October 2002 1/8 STD93003 THERMAL DATA R thj-case R thj-amb Thermal...