STMicroelectronics STD95N3LLH6
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.| Part No. | STD95N3LLH6 |
|---|---|
| Datasheet | STD95N3LLH6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 30V 80A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STB95N3LLH6 STD95N3LLH6 STP95N3LLH6 STU95N3LLH6 VDSS 30 V 30 V 30 V 30 V RDS(on) max 0.0042 Ω 0.0042 Ω 0.0042 Ω 0.0047 Ω ID 80 A 80 A 80 A 80 A● RDS(on) * Qg industry benchmark
● Extremely low on-resistance RDS(on)
● High avalanche ruggedness
● Low gate drive power losses Application
● Switching applications
DESCRIPTION
3 1 DPAK 3 2 1 IPAK 3 1 D²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1. Device summary Order codes STB95N3LLH6 STD95N3LLH6 STP95N3LLH6 STU95N3LLH6 Marking 95N3LLH6 95N3LLH6 95N3LLH6 95N3LLH6 S(3) AM01474v1 Package D²PAK DPAK TO-220 IPAK Packaging Tape and reel Tape and reel Tube Tube November 2009 Doc ID 15228 Rev 3 1/18 18 Contents Contents STx95N3LLH6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
