STMicroelectronics STD9N10-1
N-CHANNEL POWER MOS TRANSISTOR
GENERAL FEATURES
Type STD9N10 STD9N10-1 VDSS 100 V 100 V RDS(on) < 0.27 Ω < 0.27 Ω ID 9A 9A STD9N10 STD9N10-1 Figure 1. PackageFEATURES
SUMMARY● TYPICAL RDS(on) = 0.23 Ω
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● AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") IPAK TO-251 3 2 1 3 1 DPAK TO-252
● Figure 2. Internal Schematic Diagram
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APPLICATIONS
● HIGH CURRENT, HIGH SPEED SWITCHING●
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● SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) Table 2. Order Codes Part Number STD9N10T4 STD9N10-1 Marking D9N10 D9N10 Package DPAK IPAK Packaging TAPE & REEL TUBE REV. 2 May 2004 1/12 STD9N10/STD9N10-1 Table 3. Absolute Maximum Ratin...