STMicroelectronics STD9N40M2
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.| Part No. | STD9N40M2 |
|---|---|
| Datasheet | STD9N40M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 400V 6A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS @ TJmax RDS(on)max. ID STD9N40M2 450 V 0.8 Ω 6A● Extremely low gate charge
● Excellent output capacitance (COSS) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status STD9N40M2 Product summary Order code STD9N40M2 Marking 9N40M2 Package DPAK Packing Tape and reel DS10114 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness Tj Operating junction temperature range Tstg Storage temperature range 1.
