STD9N60M6 Datasheet | STMicroelectronics

N‑channel 600 V 670 mΩ typ., 6 A MDmesh M6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code RDS(on) max. 600 V 750 mΩ 6A - Reduced switching losses - Lower RDS(on) per area vs previous generation - Low gate input resistance - 100% avalanche tested - Zener-protected Applications - Switching applications - LLC converters, resonant converters - Boost PFC converters Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which bines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STD9N60M6 Product summary Order code Marking 9N60M6 Package...