STMicroelectronics STD9NM40N
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STD9NM40N |
|---|---|
| Datasheet | STD9NM40N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STD9NM40N STP9NM40N VDSS@TJMAX RDS(on)max. ID 450 V < 0.79 Ω 5.6 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
● Switching applicationsDESCRIPTION
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. TAB 3 1 DPAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' 3 !- V Table 1. Device summary Order codes STD9NM40N STP9NM40N Marking 9NM40N Packages DPAK TO-220 Packaging Tape and reel Tube December 2012 This is information on a product in full production. Doc ID 023762 Rev 2 1/18 18 Contents Contents STD9NM40N, STP9NM40N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
