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STD9NM50N - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD9NM50N 500 V 790 mΩ 5A.
  • AEC-Q101 qualified.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD9NM50N Datasheet Automotive-grade N-channel 500 V, 730 mΩ typ., 11 A MDmesh II Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD9NM50N 500 V 790 mΩ 5A • AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications G(1) • Switching applications S(3) Description AM01475v1_noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.