STMicroelectronics STDID5B
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STDID5B |
|---|---|
| Datasheet | STDID5B Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR VGS I D (* ) ID I DM (● ) P tot EAS (1) T st g Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature (1) starting Tj = 25 oC, ID =12A , VDD = 30V o Value 55 55 ± 20 12 8 48 35 0.23 25 -65 to 175 175 Unit V V V A A A W W/ o C mJ o o C C (●) Pulse width limited by safe operating area New RDS(on) spec. starting from July ’98 May 2000 1/6 STDID5B THERMAL DATA R thj-case R thj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 4.3 100 275 o o C/W C/W o C ELECTR...
