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STE07DE220 - Hybrid emitter switched bipolar transistor

General Description

The STE07DE220 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology.

The STE07DE220 is designed for use in industrial mains flyback converters and/or special applications.

Table 2.

Key Features

  • Table 1. VCS(ON) 0.5V.
  • IC 7A RCS(ON) 0.07 Ω High voltage / high current cascode configuration Ultra low equivalent on resistance Very fast-switch, up to 150 kHz Ultra low CISS Low dynamic VCS(ON) Figure 1. Internal schematic diagrams ISOTOP.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STE07DE220 Hybrid emitter switched bipolar transistor ESBT® 2200V - 7A - 0.07 W power module Preliminary Data Features Table 1. VCS(ON) 0.5V ■ ■ ■ ■ ■ IC 7A RCS(ON) 0.07 Ω High voltage / high current cascode configuration Ultra low equivalent on resistance Very fast-switch, up to 150 kHz Ultra low CISS Low dynamic VCS(ON) Figure 1. Internal schematic diagrams ISOTOP Applications ■ ■ Industrial converters Welding Description The STE07DE220 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE07DE220 is designed for use in industrial mains flyback converters and/or special applications. Table 2.