STMicroelectronics STE100N20
N-CHANNEL POWER MOS TRANSISTOR
| Part No. | STE100N20 |
|---|---|
| Datasheet | STE100N20 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOS TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS 1 2 4 3 ISOTOP INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol P ar amete r VD S Drain-Source Voltage (VGS = 0) VDG R Drain-Gate Voltage (RGS = 20 kΩ) VGS Gate-Source Voltage ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM(●) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor Tstg Storage Temperature Tj Max. Operating Junction Temperature VISO Insulation Withstand Voltage (AC-RMS) (●) Pulse width limited by safe operating area July 1993 Value 200 200 ± 20 100 65 400 450 3.6 -55 to 150 150 2500 Unit V V V A A A W W /o C oC oC V 1/8 STE100N20 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthc-h Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.27 0.05 oC/ W oC/ WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) OFF Symb ol Parameter Test Condition...
