STMicroelectronics STE110NA20
N-CHANNEL FAST POWER MOS TRANSISTOR
| Part No. | STE110NA20 |
|---|---|
| Datasheet | STE110NA20 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL FAST POWER MOS TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM(●) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor Tstg Storage Temperature Tj Max. Operating Junction Temperature VISO Insulation Withhstand Voltage (AC-RMS) (●) Pulse width limited by safe operating area March 1996 Value 200 200 ± 30 110 73 440 450 3.6 -55 to 150 150 2500 Unit V V V A A A W W/oC oC oC V 1/8 STE110NA20 THERMAL DATA Rthj-case Rthc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.27 0.05 oC/W oC/W AVALANCHE CHARACTERISTICS Symbol IAR EAS EAR IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited b...
