STMicroelectronics STE110NS20FD
N-channel 200V 110A Power MOSFET
DESCRIPTION
P Using the latest high voltage MESH OVERLAY™ te process, STMicroelectronics has designed an le advanced family of Power MOSFETs with outstanding performances. The new patented so STrip layout coupled with the Company’s b proprietary edge termination structure, gives the O lowest RDS(ON) per area, exceptional avalanche - and dv/dt capabilities and unrivalled gate charge ) and switching characteristics. ct(sAPPLICATIONS
du● Switching application ISOTOP Internal schematic diagram lete Pro Order codes bsoPart number O STE110NS20FD Marking E110NS20FD Package ISOTOP Packaging Tube May 2006 Rev 3 1/12 12 Contents Contents STE110NS20FD 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .