STMicroelectronics STE15N100
N-CHANNEL POWER MOS TRANSISTOR
APPLICATIONS
: . SMPS&UPS . MOTOR CONTROL . WELDING EQUIPMENT . OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter V ds D ra in-S o urce V o lta g e (V gs = 0) V dgr V gs Id D ra in-G ate V oltage (R gs = 20 kO) G ate-S ource Voltage Drain C urrent (continuous) a t T c = 25 °C Id Drain C urrent (continuous) a t T c = 100 °C Idm (») D rain C u rre n t (p u lse d ) P to t Total D issipation at Tc = 25 °C D erating Factor T s tg Storage Tem perature Tj Max. O perating Junction Tem perature Viso Insulation W ithstand V oltage (AC -R M S) (●) Pulse width limited by safe operating area July 1993 Value 1000 1000 + 20 15 9.5 60 400 3.2 -55 to 150 150 2500 Unit V V V A A A W W /°C °C °C V 1/8 STE15N100 THERMAL DATA Rthj-case R th c -h Therm al Resistance Junction-case Therm al R esistance C ase-heatsink W ith C onductive G rease A pplied Max Max 0.31 0.05 °C /W °C /WELECTRICAL CHARACTERISTICS
(T case = 25 °C unless otherwise specified)...