STMicroelectronics STE180N10
N-Channel 100V 180A POWER MOSFET
| Part No. | STE180N10 |
|---|---|
| Datasheet | STE180N10 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 100V 180A POWER MOSFET |
| Buy | Stock & Price |
APPLICATIONS
: s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ISOTOP INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM(●) Ptot Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (AC-RMS) Tstg Storage Temperature Tj Max. Operating Junction Temperature (●) Pulse width limited by safe operating area February 1999 Value Unit 100 V 100 V ± 20 V 180 A 119 A 540 A 450 W 3.6 W/oC 2500 -55 to 150 150 (1) ISD ≤180 Α, di/dτ ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX V oC oC 1/8 STE180N10 THERMAL DATA Rthj-case Rthc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With conductive Grease Applied Max Max 0.27 0.05 oC/W oC/W AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanc...
