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STE250NS10 - ISOTOP STripFET Power MOSFET

General Description

testrip-based process.

Key Features

  • Type VDSS RDS(on) ID STE250NS10 100 V.

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Full PDF Text Transcription for STE250NS10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STE250NS10. For precise diagrams, and layout, please refer to the original PDF.

STE250NS10 N-channel 100 V, 0.0045 Ω, 220 A, ISOTOP STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STE250NS10 100 V <0.0055 Ω 220 A t(s)■ Standard threshold drive ■...

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) ID STE250NS10 100 V <0.0055 Ω 220 A t(s)■ Standard threshold drive ■ 100% avalanche tested ducDescription ProThis Power MOSFET is the latest development of STMicroelectronics unique "single feature size" testrip-based process. The resulting transistor leshows extremely high packing density for low onoresistance, rugged avalanche characteristics and bsless critical alignment steps therefore a remarkable manufacturing reproducibility. ) - OApplications Obsolete Product(s■ Switching application ISOTOP Figure 1. Internal schematic diagram Table 1. Device summary Order code STE250NS10 Marking E250NS10 Package ISOTOP Packaging

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