STMicroelectronics STE26N50
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
| Part No. | STE26N50 |
|---|---|
| Datasheet | STE26N50 Download |
| Manufacturer |  STMicroelectronics |
| Description | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS sABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(●) P tot T stg Tj V ISO Parameter Drain-Source Voltage (V GS = 0) Drain-Gate Voltage (RGS = 20 k Ω ) Gate-Source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) o o Value 500 500 ± 20 26 17 104 300 2.4 -55 to 150 150 2500 Unit V V V A A A W W/o C o o C C V (●) Pulse width limited by safe operating area July 1993 1/8 STE26N50 THERMAL DATA R thj-cas e R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.42 0.05 o o C/W C/W
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage I D = 1 mA Test Conditions V GS = 0 V Min.
