GENERAL FEATURES
TYPE STE30NK90Z s s s s STE30NK90Z Figure 1: Package ID 28 A Pw 500 W VDSS 900 V RDS(on) < 0.26 Ω TYPICAL RDS(on) = 0.21 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED DESCRIPTION
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR WELDING EQUIPMENT s ISOTOP Figure 2: Internal Schematic Diagram Table 2: Order Codes SALES TYPE STE30NK90Z MARKING E30NK90Z PACKAGE ISOTOP PACKAGING TUBE Rev.3 January 2005 1/10 STE30NK90Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuo...
STMicroelectronics
