STMicroelectronics STE36N50-DA
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode
| Part No. | STE36N50-DA |
|---|---|
| Datasheet | STE36N50-DA Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode |
| Buy | Stock & Price |
APPLICATIONS
: s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s ASYMMETRICAL HALF BRIDGE SMPS (WITH COMPLIMENTARY STE36N50-DK) INTERNAL SCHEMATIC DIAGRAM MOSFETABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(●) P tot T stg Tj V ISO Parameter Drain-Source Voltage (V GS = 0) Drain-Gate Voltage (RGS = 20 k Ω ) Gate-Source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) o o Value 500 500 ± 20 36 24 144 380 3.3 -55 to 150 150 2500 Unit V V V A A A W W/o C o o C C V (●) Pulse width limited by safe operating area September 1994 1/9 STE36N50-DA DIODE
ABSOLUTE MAXIMUM RATINGS
Symbol V RRM V RS M I F(RMS ) I FRM P to t Parameter Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage RMS Forward Current Repet. Peak Forward Current (t p = 5 µ s, f = 5KHz) Total Dis...
