STMicroelectronics STE36N50-DK
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode
| Part No. | STE36N50-DK |
|---|---|
| Datasheet | STE36N50-DK Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode |
| Buy | Stock & Price |
APPLICATIONS
LOW GATE CHARGE MOSFET TURBOSWITCH DIODE INCORPORATED HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) 1 2 ISOTOP INTERNAL SCHEMATIC DIAGRAM INDUSTRIALAPPLICATIONS
: SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s POWER FACTOR CORRECTOR s ASYMMETRICAL HALF BRIDGE SMPS (WITH COMPLIMENTARY STE36N50-DA) s MOSFETABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(●) P tot T stg Tj V ISO Parameter Drain-Source Voltage (V GS = 0) Drain-Gate Voltage (RGS = 20 k Ω ) Gate-Source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) o o...
