STMicroelectronics STE40NA60
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
| Part No. | STE40NA60 |
|---|---|
| Datasheet | STE40NA60 Download |
| Manufacturer |  STMicroelectronics |
| Description | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS s INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (● ) Ptot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor T stg Tj V ISO Storage Temperature Max. Operating Junction Temperature Insulation Withhstand Voltage (AC-RMS) o o Value 600 600 ± 30 40 26 160 460 3.6 -55 to 150 150 2500 Unit V V V A A A W W/ o C o o C C V (●) Pulse width limited by safe operating area January 1998 1/5 STE40NA60 THERMAL DATA R thj-case R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.27 0.05 o o C/W C/W AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (p...
