GENERAL FEATURES
TYPE STE40NK90ZD s s s s s s Figure 1: Package ID 40 A Pw 600 W VDSS 900 V RDS(on) < 0.18 Ω TYPICAL RDS(on) = 0.14 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY ISOTOP DESCRIPTION
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR WELDING EQUIPMENT Figure 2: Internal Schematic Diagram Table 2: Order Codes SALES TYPE STE40NK90ZD MARKING E40NK90ZD PACKAGE ISOTOP PACKAGING TUBE Rev. 4 December 2004 1/10 STE40NK90ZD Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Vo...
STMicroelectronics
