STE50DE100 Datasheet PDF | STMicroelectronics

STMicroelectronics STE50DE100

The STE50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE50DE100 is designed for use in industrial converters and/or welding equipment.

Part No.	STE50DE100
Datasheet	STE50DE100 Download
Manufacturer	STMicroelectronics
Description	HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE
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GENERAL FEATURES

VCS(ON) 1.3 V n Figure 1: Package RCS(ON) 0.026 W IC 50 A n n n n HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz ULTRA LOW CISS LOW DYNAMIC VCS(ON) ISOTOP APPLICATION n INDUSTRIAL CONVERTERS n WELDING

DESCRIPTION

Figure 2: Internal Schematic Diagram Electrical Symbol Table 2: Order Code Part Number STE50DE100 Marking STE50DE100 Package ISOTOP Device Structure Packaging TUBE October 2004 Rev. 1 1/9 STE50DE100 Table 3:

ABSOLUTE MAXIMUM RATINGS

Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ VISO Parameter Collector-Source Voltage (VBS = VGS = 0 V) Base-Source Voltage (IC= 0, VGS = 0 V) Source-Base Voltage (IC= 0, VGS = 0 V) Gate-Source Voltage Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 1ms) Total Dissipation at TC ≤ 25 oC Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) from All Four Leads to Extern...