Datasheet4U.com

STE53NC50 Datasheet PDF

STMicroelectronics STE53NC50

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Part No. STE53NC50
Datasheet STE53NC50 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMeshII MOSFET
Buy Stock & Price
STE53NC50 datasheet page 1 preview

DESCRIPTION

ISOTOP INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER n

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj May 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (AC-RMS) Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 53 33 212 460 3.68 3 2500 – 65 to 150 150 (1) ISD≤ 53A, di/dt ≤100 A/µs, VDD≤ 24V, Tj ≤TjMAX Unit V V V A A A W W/°C V/ns V °C °C 1/8 (●)Pulse width limited by safe operating area STE53NC50 THERMAL DATA Rthj-case Rthc-h Thermal Resistance Junction-case Max 0.272 0.05 °C/W °C/W Thermal Res...
STE53NC50 page 2 preview STE53NC50 page 3 preview