STMicroelectronics STESB01
The STESB01 is a dedicated base current biasing transistor for the Emitter-Switched Bipolar te c Transistor (ESBT) family of power switches. The le du device is able to control the ESBT storage time so ro (from 150ns to 1.5ìs) using closed loop architecture. This guarantees proper operation of b P the ESBT in every line and load condition, - O te avoiding oversaturation of the device and, at the OObbssoolleettee PPrroodduucctt((ss)) - Obsole same time, ensuring the correct base current SOT23-6L SO-8 when a higher load is required.DESCRIPTION
Pro t(s) The storage time can be adjusted with an external resistor, which allows maximum flexibility in different applications. The optimization of the base current value also reduces the base current losses to minimum level. Order code Part number STESB01STR STESB01DR Package SOT23-6L SO-8 Packaging 3000 Parts per Reel 2500 Parts per Reel October 2006 Rev. 3 1/14 14 Contents Contents STESB01 1 Schematic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 t(s) 5 Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 duc 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .