STMicroelectronics STF100N10F7
This value is limited by package. When mounted on an 1-inch2 FR-4 board, 2oz CU, t < 10 s.FEATURES
Order codes VDS RDS(on) max. ID STB100N10F7 80 A STD100N10F7 80 A STF100N10F7 100 V 8.0 mΩ 45 A STI100N10F7 80 A STP100N10F7 80 A● Among the lowest RDS(on) on the market
● Excellent FoM (figure of merit)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness Package D2PAK DPAK TO-220FP I2PAK TO-220
APPLICATIONS
● Switching applicationsDESCRIPTION
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status links STB100N10F7 STD100N10F7 STF100N10F7 STI100N10F7 STP100N10F7 DS9291 - Rev 6 - March 2022 For further information contact your local STMicroelectronics sales office.