STF100N6F7 Datasheet | STMicroelectronics

N-channel 60 V, 4.6 mΩ typ., 46 A STripFET™ F7 Power MOSFET in a TO-220FP package - production data Features Order code STF100N6F7 VDS RDS(on) max. ID PTOT 60 V 5.6 mΩ 46 A 25 W 72)3 Figure 1. Internal schematic diagram ' - - Among the lowest RDS(on) on the market - Excellent figure of merit (FoM) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient...