STMicroelectronics STF100N6F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STF100N6F7 |
|---|---|
| Datasheet | STF100N6F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STF100N6F7 VDS RDS(on) max. ID PTOT 60 V 5.6 mΩ 46 A 25 W 72 )3 Figure 1. Internal schematic diagram ' *● Among the lowest RDS(on) on the market
● Excellent figure of merit (FoM)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
6 $0 Y Order code STF100N6F7 Table 1. Device summary Marking Package 100N6F7 TO-220FP Packaging Tube February 2015 This is information on a product in full production. DocID027211 Rev 3 1/13 Contents Contents STF100N6F7 1 Electrical ratings . . . .
