STMicroelectronics STF10LN80K5
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 AM01476v1 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STF10LN80K5 |
|---|---|
| Datasheet | STF10LN80K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 800V 8A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STF10LN80K5 800 V 630 mΩ 8A 3 2 1 TO-220FP D(2)● Ultra-low gate charge
● Very low FoM (figure of merit)
● Zener-protected
● 100% avalanche tested
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) Product status link STF10LN80K5 Product summary Order code STF10LN80K5 Marking 10LN80K5 Package TO-220FP Packing Tube DS10993 - Rev 4 - April 2026 For further information, contact your local STMicroelectronics sales office. STF10LN80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
