STMicroelectronics STF10N60DM2
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast‑recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high‑efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STF10N60DM2 |
|---|---|
| Datasheet | STF10N60DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 600V 8A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STF10N60DM2 600 V 530 mΩ 8A 3 2 1 TO-220FP D(2)● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected G(1)
APPLICATIONS
● Switching applications S(3)DESCRIPTION
AM01476v1 Product status link STF10N60DM2 Product summary Order code STF10N60DM2 Marking 10N60DM2 Package TO-220FP Packing Tube DS11668 - Rev 2 - April 2026 For further information, contact your local STMicroelectronics sales office. STF10N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
