STMicroelectronics STF10N60M2
This device is an N-channel Power MOSFET developed using MDmesh M2 technology.| Part No. | STF10N60M2 |
|---|---|
| Datasheet | STF10N60M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 7.5A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STF10N60M2 VDS at TJmax. 650 V RDS(on) max. 0.60 Ω ID 7.5 A● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STF10N60M2 Product summary Order code STF10N60M2 Marking 10N60M2 Package TO-220FP Packing Tube DS9705 - Rev 5 - February 2021 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(3) Peak diode recovery voltage slope dv/dt(4) MOSFE...
