STF110N10F7 Description
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order codes STF110N10F7 STP110N10F7 Table.
STF110N10F7 Key Features
- Ultra low on-resistance
- 100% avalanche tested