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STF110N10F7, STP110N10F7
N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages
Datasheet - production data
Features
TAB
3 2 1
TO-220FP
3 2 1
TO-220
Order codes VDS RDS(on) max ID PTOT
STF110N10F7 100 V 0.007 Ω
STP110N10F7
45 A 30 W 110 A 150 W
• Ultra low on-resistance • 100% avalanche tested
Applications
• Switching applications
Figure 1. Internal schematic diagram
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Description
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
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Order codes STF110N10F7 STP110N10F7
Table 1.
STF110N10F7 Datasheet
