STMicroelectronics STF110N10F7
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.FEATURES
TAB 3 2 1 TO-220FP 3 2 1 TO-220 Order codes VDS RDS(on) max ID PTOT STF110N10F7 100 V 0.007 Ω STP110N10F7 45 A 30 W 110 A 150 W● Ultra low on-resistance
● 100% avalanche tested
APPLICATIONS
● Switching applications Figure 1. Internal schematic diagram ' 7$%DESCRIPTION
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. * 6 $0 Y Order codes STF110N10F7 STP110N10F7 Table 1. Device summary Marking Package 110N10F7 TO-220FP TO-220 Packaging Tube July 2013 This is information on a product in full production. DocID024058 Rev 2 1/16 16 Contents Contents STF110N10F7, STP110N10F7 1 Electrical ratings . . . . . . .