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STF11N60DM2 Datasheet PDF

STMicroelectronics STF11N60DM2

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- NG1D2S3Z recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Part No. STF11N60DM2
Datasheet STF11N60DM2 Download
Manufacturer
STMicroelectronics
Description 600V 10A N-Channel Power MOSFET
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STF11N60DM2 datasheet page 1 preview

APPLICATIONS

● Switching applications PTOT 25 W

DESCRIPTION

S(3) Product status STF11N60DM2 Product summary Order code STF11N60DM2 Marking 11N60DM2 Package TO220FP Packing Tube DS11673 - Rev 2 - November 2019 For further information contact your local STMicroelectronics sales office. STF11N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at Tcase = 25 °C ID Drain current (continuous) at Tcase = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at Tcase = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness VISO (4) Insulation withstand voltage (RMS) from all three leads to external heat sink Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 10 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V 3. VDS ≤ 480 V. 4. t = 1 s; TC = 25 °C Symbol Rthj-case Rthj-amb Table 2.
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