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STF11N60DM2 - N-CHANNEL POWER MOSFET

General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Key Features

  • Order code STF11N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.420 Ω ID PTOT 10 A 25 W.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF11N60DM2 N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data 3 2 1 TO-220FP Figure 1: Internal schematic diagram Features Order code STF11N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.420 Ω ID PTOT 10 A 25 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.