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STF11N65M2-045Y - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code VDS RDS(on) max. ID STF11N65M2(045Y) 650 V 0.68 Ω 7A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected PTOT 25 W D(2) G(1) S(3).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF11N65M2(045Y) Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads package 123 TO-220FP narrow leads Features Order code VDS RDS(on) max. ID STF11N65M2(045Y) 650 V 0.68 Ω 7A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected PTOT 25 W D(2) G(1) S(3) Applications • Switching applications NG1D2S3Z Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.