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STF11NM60ND - N-Channel Power MOSFET

General Description

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology.

Key Features

  • Order code VDS at TJ max. RDS(on) max. ID STF11NM60ND 650 V 450 mΩ 10 A.
  • Fast-recovery body diode.
  • Low gate charge and input capacitance.
  • Low on-resistance RDS(on).
  • 100% avalanche tested.
  • High dv/dt ruggedness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in a TO-220FP package 3 2 1 TO-220FP D(2) G(1) S(3) AM01475v1_noZen_noTab Features Order code VDS at TJ max. RDS(on) max. ID STF11NM60ND 650 V 450 mΩ 10 A • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness Applications • Switching applications Description This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.