STMicroelectronics STF12N50DM2
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast‑recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high‑efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STF12N50DM2 |
|---|---|
| Datasheet | STF12N50DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 500V 11A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STF12N50DM2 VDS 500 V RDS(on) max. 350 mΩ ID 11 A 3 2 1 TO-220FP D(2)● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected G(1)
APPLICATIONS
● Switching applications S(3)DESCRIPTION
AM01476v1 Product status link STF12N50DM2 Product summary Order code STF12N50DM2 Marking 12N50DM2 Package TO-220FP Packing Tube DS10537 - Rev 3 - May 2026 For further information, contact your local STMicroelectronics sales office. STF12N50DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
