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STF12NK65Z - N-CHANNEL MOSFET

General Description

This high voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

Key Features

  • Order code STF12NK65Z VDS 650 V RDS(on) max. 0.7 Ω ID 10 A PTOT 35 W.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF12NK65Z N-channel 650 V, 0.6 Ω typ., 10 A SuperMESH™ Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram D(2) G(1) Features Order code STF12NK65Z VDS 650 V RDS(on) max. 0.7 Ω ID 10 A PTOT 35 W  Extremely high dv/dt capability  100% avalanche tested  Gate charge minimized  Zener-protected Applications  Switching applications Description This high voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.