STF12NM50ND Datasheet | STMicroelectronics

STB12NM50ND STD12NM50ND, STF12NM50ND N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 Ω 11 A STD12NM50ND 550 V 0.38 Ω 11 A 550 V 0.38 Ω 11 A - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Application - Switching applications Description FDmesh™ technology bines the MDmesh™ Features with an intrinsic fast-recovery body diode. The resulting product has reduced onresistance and fast switching mutations, making it especially suitable for bridge topologies where low trr is required. 3 1 D2PAK 3...