STMicroelectronics STF12NM60N
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STF12NM60N |
|---|---|
| Datasheet | STF12NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω ID 1 3 3 12 STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N 10A 10A 10A(1) 10A 10A D²PAK I²PAK TO-247 3 1 2 3 1 2 1. Limited only by maximum temperature allowed●
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● 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Internal schematic diagram
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. Application● Switching application Order codes Part number STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N Marking B12NM60N B12NM60N F12NM60N P12NM60N W12NM60N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube April 2007 Rev 2 1/18 18 Contents STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
