STMicroelectronics STF130N10F3
This is information on a product in full production.FEATURES
Order codes STF130N10F3 STFI130N10F3 STH130N10F3-2 STP130N10F3●
● VDSS RDS(on) max. 9.6 mΩ ID 3 46 A TO-220FP 1 2 1 2 3 100 V 9.3 mΩ 9.6 mΩ I²PAKFP 120 A TAB TAB Ultra low on-resistance 100% avalanche tested 2 1 3 1 2 3 H²PAK-2 TO-220
APPLICATIONS
● High current switching applications Figure 1. Internal schematic diagram $ 4!"DESCRIPTION
These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. $ 4!" ' ' 3 4/ 4/ &0 AND ) 0!+&0 3 (£0!+ !- V Table 1. Device summary Order codes Marking Package TO-220FP I²PAKFP 130N10F3 H²PAK-2 TO-220 Packaging Tube Tube Tape and reel Tube STF130N10F3 STFI130N10F3 STH130N10F3-2 STP130N10F3 November 2012 Doc ID 018492 Rev 3 1/23 23 Free Datasheet Contents STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .