STMicroelectronics STF13NM60N-H
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STF13NM60N-H |
|---|---|
| Datasheet | STF13NM60N-H Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Type STF13NM60N-H●
●
● VDSS (@Tjmax) 650 V RDS(on) max < 0.36 Ω ID 11 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 Application
● TO-220FP Switching applications
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram $ ' 3 3# Table 1. Device summary Order codes Marking 13NM60N Packages TO-220FP Packaging Tube STF13NM60N-H(1) 1. The device meets ECOPACK® standards, an environmentally-friendly grade of products commonly referred to as “halogen-free” . See Section 4: Package mechanical data. January 2010 Doc ID 16963 Rev 1 1/13 13 Contents STF13NM60N-H Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuits ..............................................
