STF13NM60N-H Overview
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. .. Figure 1. Internal schematic diagram $ ' 3 3# Table 1. Device summary .st. 13 Contents STF13NM60N-H Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
STF13NM60N-H Key Features
- VDSS (@Tjmax) 650 V
- TO-220FP
