STMicroelectronics STF13NM60N
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STF13NM60N |
|---|---|
| Datasheet | STF13NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STF13NM60N 600 V 360 mΩ 11 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
● Switching applicationsDESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. Product status link STF13NM60N Product summary Order code STF13NM60N Marking 13NM60N Package TO-220FP Packing Tube DS14454 - Rev 1 - September 2023 For further information contact your local STMicroelectronics sales office. STF13NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt (3) Pea...
