STMicroelectronics STF140N10F4
This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in avalanche and commutation mode. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.FEATURES
Type STB140N10F4 STF140N10F4 STP140N10F4●
●
● VDSS 100 V 100 V 100 V RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ ID 140 A 55 A 3 3 1 2 140 A TO-220FP 1 2 TO-220 Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested 3 1 Application
● D²PAK Switching applications Figure 1. Internal schematic diagram
DESCRIPTION
Table 1. Device summary Marking 140N10F4 140N10F4 140N10F4 Package D²PAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Order codes STB140N10F4 STF140N10F4 STP140N10F4 January 2009 Rev 1 1/13 13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STB140N10F4, STF140N10F4, STP140N10F4 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................