STF140N10F4 Datasheet | STMicroelectronics

.. STB140N10F4, STF140N10F4 STP140N10F4 N-channel 100 V, 5.2 mΩ, 60 A TO-220, D2PAK, TO-220FP STrip FET™ Deep GATE™ Power MOSFET Preliminary Data Features Type STB140N10F4 STF140N10F4 STP140N10F4 - - - VDSS 100 V 100 V 100 V RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ ID 140 A 55 A 3 1 2 140 A TO-220FP TO-220 Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested 3 1 Application - D²PAK Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET is among the latest developments that use an advanced technology (STrip FET™ Deep GATE™ technology), which has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in avalanche and mutation mode. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Marking 140N10F4 140N10F4 140N10F4 Package D²PAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Order codes STB140N10F4 STF140N10F4 STP140N10F4 January 2009 Rev 1 1/13 .st. 13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without...